Micron Technology to Invest $200 Billion in U.S. Memory Manufacturing and R&D
Micron Technology has revealed ambitious plans to invest approximately $200 billion in domestic memory manufacturing and research and development (R&D) over the coming years. This investment is expected to create around 90,000 jobs, both direct and indirect, across the nation.
As part of this initiative, Micron will allocate an additional $30 billion toward expanding its operations, which includes constructing a new memory fabrication facility in Boise, Idaho, modernizing its existing manufacturing site in Manassas, Virginia, and enhancing advanced packaging capabilities essential for High Bandwidth Memory (HBM), a key technology in the rapidly growing AI market.
The broader vision comprises not only two state-of-the-art high-volume fabs in Idaho but also up to four in New York, alongside the continued modernization of the Virginia facility. This large-scale investment aims to solidify Micron’s goal of producing 40% of its DRAM domestically, thereby strengthening the U.S. semiconductor supply chain.
Micron is already progressing with its first Idaho fab, expected to commence DRAM output in 2027. The second fab and the New York facilities are set for development, with ground preparation beginning later this year after completing environmental reviews.
Micron has received valuable financial backing, including a $275 million grant from the CHIPS Act to support modernizing its Virginia facility and additional incentives at various government levels. The company has expressed appreciation for the support from key figures in government, emphasizing the importance of U.S. semiconductor capabilities.
“Our commitment to innovation and the domestic semiconductor industry is unwavering,” stated Sanjay Mehrotra, Micron’s Chairman and CEO. This significant investment not only underscores Micron’s leadership in memory technology but also fortifies America’s position in key sectors like AI and aerospace.
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